Measurement and application of vertical inductors in high-speed broadband circuit

Author

Belfiore, G. ; Henker, R. ; Ellinger, F.

Author_Institution

Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany

Volume

50

Issue

25

fYear

2014

fDate

12 4 2014

Firstpage

1915

Lastpage

1917

Abstract

The measurement results and a practical application of vertical inductors (VIs) are presented. VIs are on-chip inductors designed to save chip area. In VI the spiral plane is oriented perpendicularly with respect to the substrate. An inductance of 318 pH with a self-resonance frequency of 66.5 GHz is implemented in a 130 nm bipolar complementary metal-oxide semiconductor (BiCMOS) technology and results are compared with three-dimensional (3D) planar EM (ground-signal-ground) simulations. The inductance per unit area is 424 nH/mm², more than 1.7 times higher than other simulated spiral horizontal inductors. Moreover, VIs have been applied in the design of a broadband amplifier leading to a 25% bandwidth enhancement.

Keywords

BiCMOS analogue integrated circuits; inductors; wideband amplifiers; 3D planar EM simulations; BiCMOS technology; VI; bandwidth enhancement; bipolar complementary metal-oxide semiconductor technology; broadband amplifier design; high-speed broadband circuit; on-chip inductors; self-resonance frequency; simulated spiral horizontal inductors; spiral plane; three-dimensional planar simulations; vertical inductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.3114

Filename

6975678