Baseband stage for WCDMA direct conversion receiver with high dynamic range and accurate temperature compensation

Author

Ryu, Seonghan ; Jin, Sangsu ; Lee, Seunghyun ; Kim, Huijung ; Lee, Jongryul ; Kim, Bumman

Author_Institution

Syst. LSI Div., Samsung Electron. Co., Gyeunggi, South Korea

Volume

41

Issue

7

fYear

2005

fDate

3/31/2005 12:00:00 AM

Firstpage

381

Lastpage

382

Abstract

A highly integrated baseband stage, which adopts a new configuration for the wideband code-division multiple access (WCDMA) direct conversion receiver (DCR), is described. The baseband stage satisfies all requirements of the WCDMA DCR and consists of opamp-RC channel select filters and variable gain amplifiers with linear-in-dB gain control. It achieves a high dynamic range of 85 dB with ±1.5 dB accuracy over a temperature variation from -25 to 85°C, 16.5 nV/√Hz input-referred noise, +20 dBV out-of-band IIP3 and +70 dBV out of band IIP2. The baseband stage is fabricated using a 0.35 μm SiGe BiCMOS process and consumes a total current of 11 mA/CH from a 2.7 V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; active filters; code division multiple access; compensation; radio receivers; radiofrequency amplifiers; -25 to 85 C; 0.35 micron; 2.7 V; BiCMOS process; SiGe; WCDMA; accurate temperature compensation; direct conversion receiver; high dynamic range; highly integrated baseband stage; input-referred noise; linear-in-dB gain control; op amp-RC channel select filters; out of band IIP2; out-of-band IIP3; variable gain amplifiers; wideband code-division multiple access;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20057617

Filename

1421212