• DocumentCode
    780592
  • Title

    Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies

  • Author

    Marshall, Paul W. ; Dale, Cheryl J. ; Weatherford, Todd R. ; La Macchia, Michael ; LaBel, Kenneth A.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    1844
  • Lastpage
    1849
  • Abstract
    Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects
  • Keywords
    III-V semiconductors; dynamic testing; field effect logic circuits; gallium arsenide; integrated circuit testing; ion beam effects; proton effects; radiation hardening (electronics); shift registers; GaAs; GaAs HIGFET logic families; SEU sensitivity mitigation; charge enhancement effects; complementary FET logic; dynamic testing; heavy ion cross-sections; high data rate GaAs HIGFET technologies; high speed logic; proton test data; shift register; source coupled FET logic; CMOS technology; Extraterrestrial measurements; FETs; Gallium arsenide; Insulation; Laboratories; Logic testing; MESFETs; Protons; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.489225
  • Filename
    489225