Further measurements of random telegraph signals in proton irradiated CCDs

Author

Hopkins, I.H. ; Hopkinson, G.R.

Author_Institution

SIRA/UCL Postgraduate Centre, Chislehurst, UK

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2074

Lastpage

2081

Abstract

The probability/incident proton for creation of a defect in a charge-coupled device (CCD) which shows dark current random telegraph signal (RTS) behavior has been measured for energies of 1.5, 10 and 46 MeV. The probability was found to be proportional to the non-ionizing energy loss (NIEL) for elastic collisions. Plots of RTS probability versus mean dark current indicate a correlation with the amount of field enhanced emission. If a pixel already has a defect showing field enhanced emission, it is more likely to show RTS effects. The amplitudes themselves are not correlated with the degree of field enhanced emission. An alternative to the bulk metastable defect model is proposed, based on the reorientation of the phosphorus-vacancy center in a high electric field

Keywords

CCD image sensors; defect states; proton effects; random noise; semiconductor device noise; 1 to 4 krad; 1.5 to 46 MeV; CCD; P-vacancy center reorientation; RTS probability; bulk metastable defect model; dark current RTS behavior; defect creation; elastic collisions; field enhanced emission; nonionizing energy loss; proton irradiation; random telegraph signals; Annealing; Charge coupled devices; Dark current; Energy loss; Indium phosphide; Manufacturing; Protons; Silicon; Telegraphy; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489255

Filename

489255