• DocumentCode
    780960
  • Title

    The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons

  • Author

    Barry, A.L. ; Houdayer, A.J. ; Hinrichsen, P.F. ; Letourneau, W.G. ; Vincent, J.

  • Author_Institution
    Communication Res. Centre, Ottawa, Ont., Canada
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    2104
  • Lastpage
    2107
  • Abstract
    The energy dependence of lifetime damage constants have been measured in GaAs LEDs for 1-500 MeV protons. At energies below about 100 MeV, the dependence is close to that expected based on proportionality between non-ionizing energy loss (NIEL) and damage constants. In the 150-500 MeV range, however, a monotonic decrease in damage constant is found, at variance with published calculations which show an increase with energy. Two possible explanations are suggested; an inadequate model for the calculated energy dependence of NIEL, or the creation of damage clusters which have less effect than the deposition of an equivalent energy in the form of point defects
  • Keywords
    III-V semiconductors; carrier lifetime; gallium arsenide; light emitting diodes; minority carriers; point defects; proton effects; 1 to 500 MeV; GaAs; GaAs LEDs; damage clusters; displacement damage dose; energy dependence; equivalent energy deposition; lifetime damage constants; minority carrier lifetime; nonionizing energy loss; point defects; proton irradiation; Degradation; Energy loss; Energy measurement; Gallium arsenide; Lattices; Light emitting diodes; Particle beams; Proton accelerators; Silicon compounds; Silicon devices;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.489259
  • Filename
    489259