• DocumentCode
    780980
  • Title

    Monolithic integration of resonant tunneling diodes and FET´s for monostable-bistable transition logic elements (MOBILE´s)

  • Author

    Chen, Kevin J. ; Akeyoshi, Tomoyuki ; Maezawa, Koichi

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    16
  • Issue
    2
  • fYear
    1995
  • Firstpage
    70
  • Lastpage
    73
  • Abstract
    A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieve MOBILE operation is demonstrated using monolithic integration of resonant tunneling diodes (RTD) and FETs. In our new integration structure, an RTD and FET are connected in parallel. This structure offers several advantages including separate optimization of RTD´s and FET´s, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation at room temperature is demonstrated as the evidence of monostable-to-bistable transition.<>
  • Keywords
    field effect logic circuits; gallium arsenide; logic gates; monolithic integrated circuits; negative resistance devices; resonant tunnelling diodes; AlAs-GaAsIn; FETs; GaAs-AlGaAs; MOBILE; RTD; inverter operation; logic gate; monolithic integration; monostable-bistable transition logic elements; multiple functions; multiple inputs; n-type NDR devices; negative differential resistance; parallel connection; resonant tunneling diodes; room temperature operation; Circuit synthesis; Design optimization; Diodes; FETs; Inverters; Logic devices; Logic gates; Monolithic integrated circuits; Resonant tunneling devices; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.386032
  • Filename
    386032