DocumentCode
780980
Title
Monolithic integration of resonant tunneling diodes and FET´s for monostable-bistable transition logic elements (MOBILE´s)
Author
Chen, Kevin J. ; Akeyoshi, Tomoyuki ; Maezawa, Koichi
Author_Institution
NTT LSI Labs., Kanagawa, Japan
Volume
16
Issue
2
fYear
1995
Firstpage
70
Lastpage
73
Abstract
A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieve MOBILE operation is demonstrated using monolithic integration of resonant tunneling diodes (RTD) and FETs. In our new integration structure, an RTD and FET are connected in parallel. This structure offers several advantages including separate optimization of RTD´s and FET´s, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation at room temperature is demonstrated as the evidence of monostable-to-bistable transition.<>
Keywords
field effect logic circuits; gallium arsenide; logic gates; monolithic integrated circuits; negative resistance devices; resonant tunnelling diodes; AlAs-GaAsIn; FETs; GaAs-AlGaAs; MOBILE; RTD; inverter operation; logic gate; monolithic integration; monostable-bistable transition logic elements; multiple functions; multiple inputs; n-type NDR devices; negative differential resistance; parallel connection; resonant tunneling diodes; room temperature operation; Circuit synthesis; Design optimization; Diodes; FETs; Inverters; Logic devices; Logic gates; Monolithic integrated circuits; Resonant tunneling devices; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.386032
Filename
386032
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