Title :
High mobility C60 organic field-effect transistors
Author :
Haddock, N.J. ; Domercq, B. ; Kippelen, B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
3/31/2005 12:00:00 AM
Abstract :
Organic field-effect transistors incorporating the electron transport material C60 as the active semiconductor have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm2/Vs, comparable to the state-of-the-art value measured under ultra-high-vacuum conditions.
Keywords :
field effect transistors; nitrogen; organic semiconductors; active semiconductor; ambient pressure; electron transport material; high mobility C60; high vacuum conditions; maximum field-effect mobility; nitrogen atmosphere; organic field-effect transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057199
