Temporal analysis of SEU in SOI/GAA SRAMs

Author

Francis, P. ; Colinge, J.P. ; Berger, G.

Author_Institution

Microelectron. Lab., Katholieke Univ., Leuven, Belgium

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2127

Lastpage

2137

Abstract

This paper analyzes the very strong SEU hardness of a 1k static random-access memory fabricated using the SOI/GAA technology, irradiated with a xenon ion beam at various angles of incidence. The memory has been shown to operate with a supply voltage as low as 2V while still presenting excellent SEU hardness. Since the different physical charge collection mechanisms are particularly slow in SOI devices, it is shown that collected and critical charges must be dynamically compared in order to determine the SEU threshold. A new approach is then proposed to evaluate the time-variable critical charge independently of the pulse shape generated by the incident ion, and a general analytical model is derived. Finally, predictions in good agreement with experimental data are obtained

Keywords

SRAM chips; field effect memory circuits; ion beam effects; radiation hardening (electronics); silicon-on-insulator; 1 kbit; 2 V; SEU hardness; SOI/GAA SRAMs; Xe; charge collection; critical charge; static random-access memory; temporal analysis; xenon ion beam irradiation; Analytical models; Cyclotrons; Pulse shaping methods; Random access memory; Semiconductor films; Shape; Silicon; Single event upset; Voltage; Xenon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489263

Filename

489263