Test CMOS/SOS RAM for transient radiation upset comparative research and failure analysis

Author

Nikiforov, A.Y. ; Poljakov, I.V.

Author_Institution

Specialized Electronic Systems, Moscow, Russia

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2138

Lastpage

2142

Abstract

The test Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) with eight types of memory cells was designed and tested at high dose rates with a flash X-ray machine and laser simulator. The memory cell (MC) design with additional transistors and RC-chain was found to be upset free up to 2×10¹² rad(Si)/s. An “inversion” effect was discovered in which almost 100% logic upset was observed in poorly protected memory cell arrays at very high dose rates

Keywords

CMOS memory circuits; X-ray effects; failure analysis; field effect memory circuits; integrated circuit testing; laser beam effects; random-access storage; transient analysis; RC-chain; failure analysis; flash X-ray machine; inversion effect; laser simulator; logic upset; memory cell array; test CMOS/SOS RAM; transient radiation upset; transistors; Electronic equipment testing; Failure analysis; Ionizing radiation; Logic arrays; Random access memory; Read-write memory; Semiconductor device testing; System testing; Transient analysis; X-ray lasers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489264

Filename

489264