Title :
Numerical analysis of GaAs MESFETs with p-buffer layer on semi-insulating substrate including deep traps
Author :
Horio, K. ; Yanai, H.
Author_Institution :
Shibaura Inst. of Technol., Tokyo, Japan
Abstract :
Numerical analysis of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate is presented in which impurity compensation by traps is included. Using a p-buffer layer is shown to be effective in minimising the short-channel effects as in the case of using a substrate with high density of traps.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; MESFETs; deep traps; density; impurity compensation; numerical analysis; p-buffer layer; semi-insulating substrate; short-channel effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890064
