• DocumentCode
    782180
  • Title

    High-resolution imaging of defects in III-V compound wafers by near-infra-red phase contrast microscopy

  • Author

    Montgomery, P.C. ; Fullard, J.P.

  • Author_Institution
    Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    The development of a high-resolution infra-red microscope operating in the phase contrast mode is reported for observing defects in III-V compound wafers. Strings of microprecipitates smaller than 1 mu m in diameter connected by arched dislocation paths have been observed in indium-doped GaAs. These results give similar patterns to those previously seen by other workers using A/B etching.
  • Keywords
    III-V semiconductors; dislocations; infrared spectra of inorganic solids; optical microscopy; precipitation; III-V compound wafers; arched dislocation paths; defect imaging; high-resolution infra-red microscope; microprecipitates; near-infra-red phase contrast microscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890066
  • Filename
    14234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782180