DocumentCode

782269

Title

Mechanisms of Ionizing Radiation Surface Effects on Transistors

Author

Nelson, David L. ; Sweet, Richard J.

Author_Institution

The Bendix Corporation Research Laboratories Division Southfield, Michigan

Volume

13

Issue

6

fYear

1966

Firstpage

197

Lastpage

206

Keywords

Annealing; Bipolar transistors; Current measurement; Degradation; Extraterrestrial measurements; Ionizing radiation; MOSFETs; Silicon; Space charge; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1996.4324362

Filename

4324362