Title :
Effects of lateral modes on the static and dynamic behaviour of buried heterostructure DFB lasers
Author :
Yu, S.F. ; Li, E.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
4/1/1995 12:00:00 AM
Abstract :
The transient response of buried-heterostructure distributed-feedback laser is studied. It is found that the gain margin between the lateral modes is affected by the carrier-diffusion length in the active region. In addition, the transient response of the lateral modes is also influenced by the carrier-diffusion length
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser feedback; laser modes; quantum well lasers; InGaAs-GaAs; active region; buried heterostructure DFB lasers; carrier-diffusion length; distributed-feedback laser; dynamic behaviour; gain margin; lateral modes; static behaviour; transient response;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19951855
