Title :
InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate
Author :
Kaneko, Y. ; Nakagawa, S. ; Takeuchi, T. ; Mars, D.E. ; Yamada, N. ; Mikoshiba, N.
Author_Institution :
Hewlett-Packard Labs., Kawasaki, Japan
fDate :
5/11/1995 12:00:00 AM
Abstract :
InGaAs/GaAs vertical cavity top-emitting dielectric-mirror surface-emitting lasers have been fabricated on a (311)B GaAs substrate. The threshold current was 25 mA at a lasing wavelength of 0.97 μm under pulsed operation at room temperature. The output was linearly polarised in the [2¯33] direction
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; quantum well lasers; surface emitting lasers; 0.97 micrometre; 20 degC; 25 mA; GaAs; InGaAs-GaAs; lasing wavelength; linearly polarised output; pulsed operation; threshold current; top-emitting dielectric-mirror surface-emitting lasers; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950549
