An analog random access memory in the AVLSI-RA process for an interpolating pad chamber

Author

Britton, C.L., Jr. ; Wintenberg, A.L. ; Read, K.F. ; Clonts, L.G. ; Kennedy, E.J. ; Smith, R.S. ; Swann, B.K. ; Musser, J.A.

Author_Institution

Oak Ridge Nat. Lab., TN, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2255

Lastpage

2259

Abstract

An analog memory for an interpolating pad chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-b performance, a readout settling time of 500 ns following read enable, an input and output dynamic range of +/- 2.25 V, a corrected RMS pedestal of approximately 5 mV or less, and a power dissipation of less than 10 mW/channel. The pre- and post-radiation measurements to 5 MRad are presented

Keywords

analogue storage; nuclear electronics; particle detectors; position sensitive particle detectors; radiation hardening (electronics); random-access storage; 5 Mrad; AVLSI-RA CMOS process; analog random access memory; input dynamic range; interpolating pad chamber; output dynamic range; power dissipation; read enable; readout settling time; Analog memory; Atherosclerosis; CMOS process; Laboratories; Multiplexing; Preamplifiers; Radiation hardening; Random access memory; Switches; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489423

Filename

489423