Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices

Author

Citterio, M. ; Rescia, S. ; Radeka, V.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2266

Lastpage

2270

Abstract

Front-end electronics for liquid ionization chamber calorimetry at hadron collider experiments may be exposed to substantial levels of ionizing radiation and neutron fluences in a cryogenic environment. Measurements of devices built with rad-hard technologies have shown that devices able to operate in these conditions exist. Several families of devices (Si-JFETs, rad-hard MOSFETs, and GaAs MESFETs) have been irradiated and tested at a stable cryogenic temperature up to doses of 55 Mrad of ionizing radiation and up to neutron fluences of 4×10 ¹⁴ n/cm². Radiation effects on DC characteristics and on noise will be presented

Keywords

Schottky gate field effect transistors; cryogenic electronics; detector circuits; gallium arsenide; gamma-ray effects; junction gate field effect transistors; neutron effects; nuclear electronics; radiation hardening (electronics); semiconductor device noise; 55 Mrad; DC characteristics; GaAs; GaAs MESFET; MOSFET; Si; Si-JFET; cryogenic temperature; front-end electronics; ionizing radiation; liquid ionization chamber calorimetry; neutron irradiation; noise; Calorimetry; Cryogenics; Gallium arsenide; Ionization chambers; Ionizing radiation; MOSFETs; Neutrons; Radiation effects; Radiation hardening; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489425

Filename

489425