DocumentCode :
783214
Title :
N-type ohmic contact on type-II InAs/GaSb strained layer superlattices
Author :
Kim, H.S. ; Plis, E. ; Rodriguez, J.B. ; Bishop, G. ; Sharma, Y.D. ; Krishna, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM
Volume :
44
Issue :
14
fYear :
2008
Firstpage :
881
Lastpage :
882
Abstract :
Different metallisation schemes for the formation of n-type ohmic contact on type-II InAs/GaSb strained layer superlattice material are reported. The specific contact resistance of metal contacts was evaluated by the transfer length method. The Ge(282A)/Au(547A)/Ni (50A)/Pt(470A;)/Au(2001A) contact yielded a specific contact resistance of 1.6×10-5 Omegacm2 (rapid thermal anneal, 380 C, 60 s).
Keywords :
III-V semiconductors; contact resistance; gallium compounds; germanium; gold; indium compounds; metallisation; nickel; ohmic contacts; platinum; rapid thermal annealing; semiconductor epitaxial layers; Ge-Au-Ni-Pt; InAs-GaSb; contact resistance; metallisation schemes; n-type ohmic contact; rapid thermal annealing; temperature 380 degC; time 60 s; transfer length method; type-II strained layer superlattices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20081294
Filename :
4558465
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=783214
بازگشت