A new photoreceiver concept using InGaAs-transferred-electron devices

Author

Hahn, D. ; Zwinge, G. ; Malacky, L. ; Schlachetzki, A.

Author_Institution

Inst. fur Halbleitertechnik, Tech. Univ. Braunschweig, Germany

Volume

31

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1152

Lastpage

1157

Abstract

A new optical receiver is proposed incorporating an InGaAs-transferred-electron device with Schottky gate-electrode (STED) and an InGaAs-metal-semiconductor-metal detector (MSM). This photoreceiver is applicable to the detection of digital, intensity modulated signals and can be integrated on an InP-substrate. The monolithically integrated circuit has been fabricated. Both the integrated STED and the MSM detector has been characterized. From the measurements the receiver can be expected to offer high current gain and inherent pulse shaping. Based on experiments the sensitivity and the gain of the photoreceiver as a function of the bit-rate has been calculated

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical modulation; optical receivers; sensitivity; InGaAs; InGaAs-metal-semiconductor-metal detector; InGaAs-transferred-electron device; InGaAs-transferred-electron devices; InP; InP-substrate; Schottky gate-electrode; bit-rate; high current gain; inherent pulse shaping; intensity modulated signals; monolithically integrated circuit; optical receiver; photoreceiver concept; photoreceiver gain; sensitivity; Current measurement; Detectors; Digital modulation; Gain measurement; Integrated circuit measurements; Intensity modulation; Monolithic integrated circuits; Optical receivers; Pulse measurements; Pulse shaping methods;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.387054

Filename

387054