Correlation of Scattering Loss, Sidewall Roughness and Waveguide Width in Silicon-on-Insulator (SOI) Ridge Waveguides

Author

Yap, Kuan Pei ; Delâge, André ; Lapointe, Jean ; Lamontagne, Boris ; Schmid, Jens H. ; Waldron, Philip ; Syrett, Barry A. ; Janz, Siegfried

Author_Institution

Nat. Res. Council of Canada, Ottawa, ON, Canada

Volume

27

Issue

18

fYear

2009

Firstpage

3999

Lastpage

4008

Abstract

We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mum in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-square roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.

Keywords

correlation methods; mean square error methods; optical couplers; optical fabrication; optical loss measurement; photolithography; ridge waveguides; scanning electron microscopy; silicon-on-insulator; SEM image analysis; Si-SiO₂; correlation analysis; e-beam base process; optical waveguide fabrication; photolithography; root-mean-square roughness; scattering loss; silicon-on-insulator ridge waveguide; single measurement; star coupler; waveguide sidewall roughness; waveguide width; Scattering loss; sidewall roughness; silicon-on-insulator (SOI) waveguide; star coupler;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2009.2021562

Filename

4895221