DocumentCode :
783897
Title :
Surface Ionization Ion Sources
Author :
Wilson, R.G.
Author_Institution :
Hughes Research Laboratories Malibu, California
Volume :
14
Issue :
3
fYear :
1967
fDate :
6/1/1967 12:00:00 AM
Firstpage :
72
Lastpage :
74
Abstract :
Recent achievements with iridium surface ionization ion sources are discussed. These sources can be used to produce ion beams of elements with ionization potentials from 5-1/2 to 6 V, e. g., the IILA metals (Al, Ga, In and Tl), the rare earths, the heavier alkaline earths, and Li, in addition to the usual heavier alkalis. Ion beams of Li, Al, Ga, and In have been produced here. Ionization efficiencies, critical temperatures, current densities, and beam purities as measured by magnetic mass separation are discussed. An ion source design being employed for the IIIA metals is described briefly.
Keywords :
Current density; Electrons; Gold; Ion beams; Ion implantation; Ion sources; Ionization; Particle separators; Semiconductor device doping; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1967.4324525
Filename :
4324525
Link To Document :
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