• DocumentCode
    784270
  • Title

    Space charge and light generation in SrS:Ce thin film electroluminescent devices

  • Author

    Neyts, Kristiaan ; Soininen, Erkki

  • Author_Institution
    Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    1086
  • Lastpage
    1092
  • Abstract
    Transient light and charge-voltage measurements on SrS and SrS:Ce thin film electroluminescent devices have been carried out with triangular voltage bursts after illumination. The observations indicate that the trailing edge emission is due to electrons which are emitted from the anodic interface as soon as the field there changes sign and recombine effectively with ionized Ce atoms. From charge-voltage measurements the space charge in the phosphor layer is estimated to be two times higher for the Ce doped sample. Due to this sample charge the field in the phosphor layer of the SrS:Ce devices decreases dramatically from the cathodic toward the anodic interface. If the field at the anodic interface is close to zero, efficient light emission will arise from recombination of electrons with ionized Ce atoms in this region
  • Keywords
    atomic layer epitaxial growth; cerium; electroluminescent devices; phosphors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; space charge; strontium compounds; SrS:Ce; anodic interface; cathodic interface; charge-voltage measurements; light generation; phosphor layer; space charge; thin film electroluminescent devices; trailing edge emission; triangular voltage bursts; Atomic layer deposition; Current measurement; Electroluminescent devices; Electron emission; Phosphors; Space charge; Spontaneous emission; Thin film devices; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.387241
  • Filename
    387241