• DocumentCode
    784281
  • Title

    Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects

  • Author

    Rinaldi, Niccolò ; D´Alessandro, Vincenzo ; Nanver, Lis K.

  • Author_Institution
    Dept. of Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    1309
  • Lastpage
    1321
  • Abstract
    An experimental and numerical study of the bipolar current mirror characteristics under strong self-heating and avalanche conditions is presented, and a theoretical model to describe the observed behavior is proposed. It is shown that both electrothermal effects and impact ionization may lead to a marked degradation of the mirroring action, eventually resulting in an instability phenomenon which limits the usable operating range of the circuit. Both the separate and combined actions of these positive-feedback mechanisms are investigated. The model compares favorably with experimental data measured on silicon-on-glass and GaAs current mirrors and allows deriving a theoretical relation for the critical condition corresponding to the onset of the instability. The impact of the most significant technology and design parameters is discussed, and design criteria are given in order to ensure an unconditionally stable behavior.
  • Keywords
    III-V semiconductors; avalanche breakdown; bipolar transistors; current mirrors; feedback; gallium arsenide; impact ionisation; silicon; thermal stability; GaAs; Si; bipolar current mirror characteristics; bipolar junction transistor; breakdown voltage; electrothermal-avalanche effect; impact ionization; mirror ratio degradation; positive-feedback mechanism; self-heating method; thermal instability phenomenon; Bandwidth; Circuits; Current measurement; Degradation; Electrothermal effects; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Mirrors; Thermal resistance; Bipolar junction transistor (BJT); breakdown voltage; current mirror; electrothermal simulation; heterojunction bipolar transistor (HBT); impact ionization; thermal instability; thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2018171
  • Filename
    4895298