Title :
Bulk breakdown of high field silicon-dielectric systems
Author :
Gradinaru, G. ; Sudarshan, T.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Preliminary results on bulk breakdown in high field silicon-dielectric systems are reported. In most cases the total breakdown of the above systems takes place by surface flashover. Bulk breakdown in high field semiconductor-dielectric systems is supposed to be produced only when one or more large filaments are developed in the bulk of the material due to a particular defect configuration. The characteristics of the bulk breakdown of the system are totally different from surface flashover. These differences are explained by the different physical nature of the two kinds of the breakdown of the system, one located in the material bulk and other at the semiconductor-dielectric interface
Keywords :
electric breakdown; elemental semiconductors; high field effects; semiconductor-insulator boundaries; silicon; Si; bulk breakdown; high field Si-dielectric systems; semiconductor-dielectric systems; surface flashover; Breakdown voltage; Delay; Dielectric breakdown; Electric breakdown; Electrodes; Flashover; Hafnium; Power semiconductor switches; Semiconductor device breakdown; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
