Scaled model measurement of the embedding impedance of a 660-GHz waveguide SIS mixer with a 3-standard deembedding method

Author

Zhang, W. ; Tong, C. Y Edward ; Shi, S.C.

Author_Institution

Purple Mountain Obs., Chinese Acad. of Sci., Nanjing, China

Volume

13

Issue

9

fYear

2003

Firstpage

376

Lastpage

378

Abstract

In this paper, the embedding impedance of a 660-GHz superconductor-insulator-superconductor (SIS) mixer is investigated using a 100-times scaled-model with a new 3-standard deembedding technique. The mixer embedding impedance is extracted from the reflection coefficients measured at the waveguide port of the mixer for three different terminations at the SIS junction´s feed point. The three standards chosen are open-circuit, short-circuit and resistive load. Measured results are compared with those simulated by a high-frequency structure simulator (HFSS).

Keywords

electric impedance measurement; microwave reflectometry; submillimetre wave measurement; submillimetre wave mixers; superconducting microwave devices; superconductor-insulator-superconductor mixers; waveguide components; waveguide transitions; 3-standard deembedding technique; 660 GHz; 660-GHz superconductor-insulator-superconductor mixer; SIS junction feed point; embedding impedance; high-frequency structure simulator; microwave network analyzer; mixer embedding impedance; open-circuit standard; reflection coefficients; resistive load standard; scaled model measurement; short-circuit standard; submillimeter regime; time domain gating; waveguide port; waveguide-to-coaxial transition; Coaxial components; Dielectric measurements; Dielectric substrates; Electromagnetic waveguides; Extraterrestrial measurements; Feeds; Impedance measurement; Reflection; Waveguide junctions; Waveguide transitions;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.817112

Filename

1232551