Title :
Characteristics of SiNx/InP/In0.53Ga0.47 As/InP heterostructure insulated gate (HIG)FET´s with an In2 S3 interface control layer
Author :
Sundararaman, C.S. ; Currie, J.F.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech. de Montreal, Que., Canada
fDate :
6/1/1995 12:00:00 AM
Abstract :
InP/InGaAs HIGFET´s with SiNx as gate insulator have been fabricated for the first time. An In2S3 interface control layer (ICL) is used to reduce trap states at the InP/SiNx interface. The ICL HIGFET´s show excellent drain I-V characteristics and allows large gate swings (±5 V) with negligible (<1 nA) gate leakage
Keywords :
III-V semiconductors; electron traps; gallium arsenide; indium compounds; insulated gate field effect transistors; power field effect transistors; silicon compounds; HIGFETs; In2S3; SiN-InP-InGaAs-InP; drain I-V characteristics; gate leakage; gate swings; heterostructure insulated gate FETs; interface control layer; trap states; Buffer layers; Capacitance; Capacitance-voltage characteristics; Capacitors; Electron traps; Indium phosphide; Insulation; Silicon compounds; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
