DocumentCode
78450
Title
1 ppm/°C bandgap with multipoint curvature-compensation technique for HVIC
Author
Yunwu Zhang ; Jing Zhu ; Weifeng Sun ; Bang Yang ; Zexiang Huang
Author_Institution
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Volume
50
Issue
25
fYear
2014
fDate
12 4 2014
Firstpage
1908
Lastpage
1910
Abstract
A high-order curvature-compensated current mode bandgap reference (BGR) over a very wide temperature range is presented. High-order curvature correction for this reference is accomplished by the proposed multipoint corrected technique, which realises exponential curvature-compensation terms in lower and higher temperature ranges separately through simple structures. The compact multipoint curvature-compensation circuit cancels out the nonlinear terms of the BGR using sub-threshold operated metal-oxide semiconductor field effect transistors, which subtract those currents that are proportional to the nonlinearity out of the reference voltage. As a result, a flattened and better effect of curvature compensation in a wide temperature range is realised. The circuit performance was verified experimentally. The measurements indicate that the proposed BGR can achieve a temperature coefficient as low as 1.01 ppm/°C over the temperature range of 160°C (-40 to 120°C).
Keywords
MOSFET circuits; compensation; current-mode circuits; reference circuits; BGR; HVIC; MCC circuit; MCCT; MOSFETs; TC; exponential curvature-compensation terms; high-order curvature correction; high-order curvature-compensated current mode bandgap reference; multipoint corrected technique; multipoint curvature-compensation technique; nonlinear terms; reference voltage; sub-threshold operated metal-oxide semiconductor field effect transistors; temperature -40 degC to 120 degC; temperature coefficient;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.2469
Filename
6975752
Link To Document