An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Author

Sudow, Mattias ; Fagerlind, Martin ; Thorsell, Mattias ; Andersson, Kristoffer ; Billstrom, Niklas ; Nilsson, Per-Ake ; Rorsman, Niklas

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg

Volume

56

Issue

8

fYear

2008

Firstpage

1827

Lastpage

1833

Abstract

A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an NF_min of 1.4 dB at X-band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; aluminium compounds; gallium compounds; AlGaN-GaN; AlGaN/GaN HEMT-based microstrip MMIC; advanced transceiver design; microstrip technology; process stability; subcircuits; Amplifier; gallium nitride (GaN); mixer; monolithic microwave integrated circuit (MMIC); switch;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.927317

Filename

4560050