Single wavelength grating filter laser array with Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW structure

Author

Dong, Jie ; Ikeda, Tetsu ; Arai, Shigehisa

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

4

Issue

9

fYear

1992

Firstpage

957

Lastpage

960

Abstract

Stable in-phase lateral- and single-longitudinal-mode operation up to four times the threshold (P/sub o/ approximately 100 mW) was achieved in a five-element 1.5- mu m-wavelength Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP compressive strained MQW grating filter laser array. The threshold current and external differential quantum efficiency under pulsed condition were 330 mA (emitter width of 18 mu m, active region length of 480 mu m) and 17%, respectively.<>

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser modes; optical filters; semiconductor laser arrays; 1.5 micron; 100 mW; 17 percent; 18 micron; 330 mA; 480 micron; Ga/sub 0.3/In/sub 0.7/As-GaInAsP-InP; IR; active region length; compressive strained; emitter width; external differential quantum efficiency; five-element; grating filter laser array; pulsed condition; semiconductors; single wavelength diode laser array; single-longitudinal-mode operation; stable in-phase lateral-mode operation; strained MQW structure; threshold current; Chemical lasers; Electrons; Fiber lasers; Filters; Gratings; Indium phosphide; Optical arrays; Optical fiber communication; Quantum well devices; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157114

Filename

157114