Threshold current reduction of GaInAs/GaInAsP/InP SCH quantum-well lasers with wire-like active region by using p-type substrates

Author

Miyake, Yasunari ; Hirayama, Hideki ; Shim, Jong In ; Arai, Shigehisa ; Miyamoto, Yasuyuki

Author_Institution

Tokyo Inst. of Technol., Japan

Volume

4

Issue

9

fYear

1992

Firstpage

964

Lastpage

966

Abstract

The threshold current of GaInAs/GaInAsP/InP separate confinement heterostructure (SCH) quantum-well lasers with narrow (70-160-nm) wirelike active regions, which were fabricated by two-step LP-OMVPE growths and wet chemical etching, was much reduced (<1 kA/cm/sup 2/) by using p-type InP substrates. This result indicates the importance of eliminating the p-n junction from the regrowth interface to enhance injection of holes into the active region.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 70 to 160 nm; GaInAs-GaInAsP-InP; InP substrates; SCH quantum-well lasers; diode lasers; enhanced hole injection; p-type substrates; regrowth interface; semiconductor growth; semiconductors; separate confinement heterostructure; threshold current; two-step LP-OMVPE growths; wet chemical etching; wire-like active region; Chemical lasers; Epitaxial growth; Etching; Indium phosphide; Optical films; Optical resonators; P-n junctions; Quantum well lasers; Substrates; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157116

Filename

157116