Picosecond pulse generation in a GaAs/GaAlAs single-quantum-well laser at the first and second subband transition

Author

Elsasser, W. ; Sacher, J. ; Hackenbuchner, F. ; Hofmann, M. ; Göbel, E.O. ; Schuster, S. ; Wicht, T. ; Haug, H. ; Jung, H. ; Schlosser, E.

Author_Institution

Fabereich Phys. und Zentrum fuer Materialwissenschaften, Philipps-Univ., Marburg, Germany

Volume

4

Issue

9

fYear

1992

Firstpage

966

Lastpage

969

Abstract

Picosecond optical pulses are generated in a single-quantum-well laser at the n=2 or n=1 quantized transition by tuning the optical gain spectra via the intracavity losses. The results for the generated pulses are discussed with respect to the influence of differential gain (dg/dN) and nonlinear gain saturation ( in ) effects.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; optical losses; optical saturation; semiconductor lasers; GaAs-GaAlAs; differential gain; high speed optical techniques; intracavity losses; nonlinear gain saturation; optical gain spectra; optical pulses; picosecond pulse generation; ps pulses; quantized transition; semiconductor diode lasers; single-quantum-well laser; subband transition; tuning; Gallium arsenide; Laser transitions; Laser tuning; Nonlinear optics; Optical losses; Optical pulse generation; Optical pulses; Optical saturation; Optical tuning; Pulse generation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157117

Filename

157117