Demonstration of an InGaAsP/InGaAs multiquantum well active-grating surface-emitting amplifier

Author

Carlson, N.W. ; Gardner, P. ; Menna, R. ; Andrews, J. ; Stolzenberger, R. ; Triano, A. ; Vangieson, E. ; Bour, D. ; Evans, G.A. ; Liew, S.K. ; Kirk, J. ; Reichert, W.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

4

Issue

9

fYear

1992

Firstpage

988

Lastpage

990

Abstract

The design and operating characteristics of an InGaAsP/InGaAs strained-layer multiquantum-well active-grating surface-emitting amplifier operating at a wavelength of 1.6 mu m are reported. Single-wavelength operation was obtained with 25-dB suppression of amplified spontaneous emission at 150-mW peak power output with a differential quantum efficiency of 24%. This result verifies earlier theoretical predictions that a power output per unit length of approximately 1 W/cm is feasible.<>

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.6 micron; 150 mW; 24 percent; IR; InGaAsP-InGaAs; amplified spontaneous emission; differential quantum efficiency; diode laser design; multiquantum well active-grating surface-emitting amplifier; operating characteristics; peak power output; power output per unit length; semiconductors; single wavelength operation; strained-layer; superradiance; Indium gallium arsenide; Laser theory; Optical amplifiers; Optical surface waves; Optical transmitters; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission; Surface emitting lasers; Surface waves;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157124

Filename

157124