Title :
InP-based all-epitaxial 1.3-μm VCSELs with selectively etched AlInAs apertures and Sb-based DBRs
Author :
Asano, Takashi ; Feezell, D. ; Koda, R. ; Reddy, M.H.M. ; Buell, D.A. ; Huntington, A.S. ; Hall, E. ; Nakagawa, Sachiko ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Mater., Univ. of California, Santa Barbara, CA, USA
Abstract :
We report, for the first time, InP-based all-epitaxially grown 1.3-μm vertical-cavity surface-emitting lasers with lattice-matched Sb-based distributed Bragg reflectors and AlInAs etched apertures. The minimum threshold current and voltage under pulsed operation were 3 mA and 2.0 V, respectively. The thermal impedance was as low as 1.2 K/mW without heat sinking. Implementation of the AlInAs etched aperture was quite effective in improving the injection efficiency and reducing the internal loss, resulting in improved differential efficiency.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; surface emitting lasers; 1.3 micron; 2.0 V; 3 mA; AlGaInAs; AlGaInAs quantum well lasers; AlInAs; AlInAs etched apertures; InP-based all-epitaxial 1.3-/spl mu/m VCSELs; Sb-based DBRs; differential efficiency; etched aperture; injection efficiency; internal loss; lattice-matched Sb-based distributed Bragg reflectors; minimum threshold current; pulsed operation; selectively etched AlInAs apertures; thermal impedance; vertical-cavity surface-emitting lasers; Apertures; Distributed Bragg reflectors; Etching; Indium phosphide; Optical fiber communication; Optical fiber testing; Optical losses; Optical surface waves; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.817987
