Improvement of AlGaInP light emitting diode by sulfide passivation

Author

Su, Y.K. ; Wang, H.C. ; Lin, C.L. ; Chen, W.B. ; Chen, S.M.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taman, Taiwan

Volume

15

Issue

10

fYear

2003

Firstpage

1345

Lastpage

1347

Abstract

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.

Keywords

III-V semiconductors; aluminium compounds; brightness; gallium compounds; indium compounds; leakage currents; light emitting diodes; passivation; rough surfaces; 2 V; 20 mA; AlGaInP; AlGaInP light emitting diode; Fresnel loss reduction; LED; brightness; effective carrier injection; leakage current; sulfide passivation; sulfide treatment; surface roughness; Brightness; Leakage current; Light emitting diodes; Passivation; Rough surfaces; Semiconductor diodes; Semiconductor impurities; Surface emitting lasers; Surface roughness; Surface treatment;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818064

Filename

1232952