DocumentCode
786555
Title
A Two Level Model for Lifetime Reduction Processes in Neutron Irradiated Silicon and Germanium
Author
Messenger, George C.
Author_Institution
Northrop Corporate Laboratories Hawthorne, California
Volume
14
Issue
6
fYear
1967
Firstpage
88
Lastpage
102
Abstract
A two level mnodel for recombination processes in neutron irradiated silicon and germanium is proposed. This model successfully explains published experimental data for lifetime and. life-time damage constant as a function of resistivity, injection level and, temperature.
Keywords
Conductivity; Electrons; Energy capture; Energy states; Germanium; Laboratories; Neutrons; Semiconductor process modeling; Silicon devices; Spontaneous emission;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1967.4324780
Filename
4324780
Link To Document