DocumentCode :
78684
Title :
2-tap pre-emphasis SST transmitter with skin effect loss equalisation in 65 nm CMOS technology
Author :
Ke Huang ; Ziqiang Wang ; Xuqiang Zheng ; Chun Zhang ; Zhihua Wang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
50
Issue :
25
fYear :
2014
fDate :
12 4 2014
Firstpage :
1910
Lastpage :
1912
Abstract :
A 2-tap pre-emphasis SST transmitter with skin effect loss equalisation is presented. The transmitter features the ability of compensating the low frequency loss caused by the channel skin effect. The transmitter equalisation coefficient setting and driver impedance adjustment are mutually decoupled. Fabricated in 65 nm CMOS technology, the transmitter can operate up to 20 Gbit/s while consuming 39 mW of power under a 1 V power supply. The skin effect loss equalisation is verified with a 24-inch FR4 channel under an 8 and 9 Gbit/s data rate.
Keywords :
CMOS integrated circuits; equalisers; skin effect; transmitters; 2-tap pre-emphasis SST transmitter; CMOS technology; FR4 channel; bit rate 8 Gbit/s; bit rate 9 Gbit/s; channel skin effect loss equalization; driver impedance adjustment; low frequency loss compensation; power 39 mW; size 24 inch; size 65 nm; transmitter equalisation coefficient; voltage 1 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.2466
Filename :
6975774
Link To Document :
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