Title :
Effect of high strain on noise characteristics in InAlAs/InGaAs pseudomorphic HEMT
Author :
Hong, Woo-Pyo ; Caneau, Catherine ; Song, J.I.
Abstract :
The authors investigate the RF noise characteristics of an InGaAs HEMT having a highly strained channel. The characteristics are compared with those of a device having a lattice-matched channel. The indium mole fraction of the strained channel was 80%. While the DC and RF performances were significantly improved with the strained channel, the RF noise characteristics showed that the device with the strained channel had higher noise and a different dependence on bias current.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; DC performance; HEMTs; InAlAs-InGaAs; RF noise characteristics; RF performances; dependence on bias current; high strain; lattice-matched channel; pseudomorphic HEMT; semiconductors; strained channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921292
