• DocumentCode
    786895
  • Title

    Effect of high strain on noise characteristics in InAlAs/InGaAs pseudomorphic HEMT

  • Author

    Hong, Woo-Pyo ; Caneau, Catherine ; Song, J.I.

  • Volume
    28
  • Issue
    21
  • fYear
    1992
  • Firstpage
    2016
  • Lastpage
    2018
  • Abstract
    The authors investigate the RF noise characteristics of an InGaAs HEMT having a highly strained channel. The characteristics are compared with those of a device having a lattice-matched channel. The indium mole fraction of the strained channel was 80%. While the DC and RF performances were significantly improved with the strained channel, the RF noise characteristics showed that the device with the strained channel had higher noise and a different dependence on bias current.
  • Keywords
    III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; DC performance; HEMTs; InAlAs-InGaAs; RF noise characteristics; RF performances; dependence on bias current; high strain; lattice-matched channel; pseudomorphic HEMT; semiconductors; strained channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921292
  • Filename
    170896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=786895