Title :
Effect of Electron Radiation on Silicon Nitride Insulated Gate Field Effect Transistors
Author :
Newman, Phillip A. ; Wegener, H.A.R.
Author_Institution :
NASA, Goddard Space Flight Center
Abstract :
Experiments indicate that silicon nitride passivation layers on top of thermally grown oxide in conjunction with heat treatment can improve the radiation stability of MISFET devices. In addition, MOSFET devices that have glass passivation layers and other special treatment can also show improved radiation stability.
Keywords :
Electrons; FETs; Glass; Heat treatment; Insulation; MISFETs; MOSFET circuits; Passivation; Silicon; Thermal stability;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1967.4324809
