Title :
DC SPICE model for nanocrystalline and microcrystalline silicon TFTs
Author :
Dosev, D. ; Ytterdal, T. ; Pallares, J. ; Marsal, L.F. ; Iñíguez, B.
Author_Institution :
Departament d´´Enginyeria Electronica Electrica i Automatica, Univ. Rovira i Virgili, Tarragona, Spain
fDate :
11/1/2002 12:00:00 AM
Abstract :
In this paper, we present a physically-based analytical model for n-channel nanocrystalline and microcrystalline thin-film transistors suitable for implementation in circuit simulators such as SPICE. The model is based on existing models for amorphous silicon thin film transistors, which have been extended to account for observed physical phenomena in nanocrystalline and microcrystalline thin film transistors. The proposed model has been verified for the most important regions of operation of the devices and has shown good agreement with experimental data.
Keywords :
SPICE; carrier mobility; elemental semiconductors; nanostructured materials; semiconductor device models; silicon; thin film transistors; DC SPICE model; Si; Si n-channel TFTs; Si thin film transistors; circuit simulators; drain current equations; microcrystalline TFT; nanocrystalline TFT; physically-based analytical model; Analytical models; Circuit simulation; Crystalline materials; Lighting; SPICE; Silicon; Stress; Temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.804719
