Title :
Correction to "Trench Isolation Step-Induced (TRISI) Narrow Width Effect on MOSFET"
Author :
Youngmin Kim ; Sridhar, S. ; Chatterjee, Avhishek
Author_Institution :
Texas Instruments
Abstract :
In the above-named work, an incorrect version of Figs. 1 and 2 appeared. The corrected figures are presented.
Keywords :
Capacitance; Instruments; MOSFET circuits; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.806972
