DocumentCode
787937
Title
Gain calculations for unipolar near infrared intersubband semiconductor laser
Author
Banerjee, S. ; Barlow, G.F. ; Shore, K.A.
Author_Institution
Sch. of Informatics, Univ. of Wales, Bangor, UK
Volume
149
Issue
2
fYear
2002
fDate
4/1/2002 12:00:00 AM
Firstpage
70
Lastpage
74
Abstract
The paper provides a theoretical investigation of the optical gain in a strain compensated InxGa(1-x)As/InyAl(1-y)As intersubband laser. Using a four-level structure in a triple quantum well, a laser is designed to emit radiation in the near infrared (2.8 μm). The effects of anticrossing and coupling are taken into account while designing such a structure, and the optical gain is calculated at temperatures of 100 K and 300 K. It is found that significant gain is obtained even at low current density
Keywords
III-V semiconductors; aluminium compounds; energy level crossing; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 100 K; 2.8 micron; 300 K; CW operation; InGaAs-InAlAs; anticrossing effects; compact laser sources; coupling effects; four-level structure; optical gain; quantum cascade laser; state lifetimes; strain compensated intersubband laser; subband engineering; triple quantum well; unipolar near infrared laser;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20020436
Filename
1019786
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