DocumentCode :
788263
Title :
Soft magnetic properties of Fe-TM-C-N (TM:Zr,Nb) nanocrystalline films
Author :
Ryu, H.J. ; Lee, J.J. ; Han, S.H. ; Kim, H.J. ; Kang, LK ; Choi, J.O.
Author_Institution :
Dept. of Metall. Eng., Seoul Nat. Univ., South Korea
Volume :
31
Issue :
6
fYear :
1995
fDate :
11/1/1995 12:00:00 AM
Firstpage :
3868
Lastpage :
3870
Abstract :
Soft magnetic properties of Fe-TM-C-N (TM:Zr,Nb) films, fabricated by RF reactive sputtering in Ar+N2 atmosphere, were investigated. The as-deposited films having mixed phases of amorphous and α-Fe or mostly crystalline α-Fe phase showed nanocrystalline structure upon annealing. The best soft magnetic properties achieved in these films are; Hc of 0.06 Oe, μ eff 2750 (1 MHz) and 4 πMs, of 16.8 kG in Fe-Zr-C-N film and Hc of 0.31 Oe, μeff of 2100 (1 MHz) and 4 πMs of 15.5 kG in Fe-Nb-C-N film. The fine grained α-Fe structure, together with very fine TM(C,N) precipitates which were formed at an early stage of crystallization, is considered to be one of the main factors for the excellent soft magnetic properties. The Fe-Zr-C-N films exhibit better soft magnetic properties than those of the Fe-Nb-C-N films, which is considered to be due to the magnitude of the formation enthalpy
Keywords :
amorphous magnetic materials; annealing; ferromagnetic materials; iron alloys; magnetic particles; nanostructured materials; niobium alloys; precipitation; soft magnetic materials; sputtered coatings; zirconium alloys; 1 MHz; 15.5 kG; 16.8 kG; Fe-Nb-C-N nanocrystalline film; Fe-Zr-C-N nanocrystalline films; FeNbCN; FeZrCN; RF reactive sputtering; amorphous phase; annealing; crystallization; fine grained structure; formation enthalpy; precipitates; soft magnetic properties; Amorphous materials; Annealing; Argon; Atmosphere; Crystallization; Magnetic films; Magnetic properties; Nanostructures; Radio frequency; Sputtering;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.489799
Filename :
489799
Link To Document :
بازگشت