DocumentCode :
789376
Title :
A micromachined vacuum triode using a carbon nanotube cold cathode
Author :
Bower, Chris ; Shalóm, Diego ; Zhu, Wei ; López, Daniel ; Kochanski, Greg P. ; Gammel, Peter L. ; Jin, Sungho
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Volume :
49
Issue :
8
fYear :
2002
fDate :
8/1/2002 12:00:00 AM
Firstpage :
1478
Lastpage :
1483
Abstract :
A fully integrated on-chip vacuum microtriode using carbon nanotubes as field emitters was constructed laterally on a silicon surface using microelectromechanical systems (MEMS) design and fabrication principles. Each electrode in the triode was made of a hinged polycrystalline silicon panel that could be rotated and locked into an upright position. The device was operated at a current density as high as 16 A/cm2. Although the transconductance was measured only at 1.3 μS, the dc output power delivered at the anode was almost 40 × more than the power lost at the grid electrode. The technique combines high-performance nano-materials with mature solid-state fabrication technology to produce miniaturized power-amplifying vacuum devices in an on-chip form, which could potentially offer a route of integrating vacuum and solid-state electronics and open up new applications for "old-fashioned" vacuum tubes.
Keywords :
carbon nanotubes; cathodes; electron field emission; micromachining; microwave power amplifiers; triodes; tunnelling; vacuum microelectronics; C; Fowler-Nordheim emission tunneling; carbon nanotube cold cathode; cutoff frequency; field emitters; fully integrated on-chip microtriode; high-performance nanomaterials; hinged polycrystalline silicon panel; microelectromechanical systems design; micromachined vacuum triode; microwave power amplifiers; power-amplifying vacuum devices; solid-state fabrication technology; three-layer polysilicon micromachining; transconductance; vacuum microelectronics; Carbon nanotubes; Cathodes; Electrodes; Fabrication; Microelectromechanical systems; Silicon; Solid state circuits; System-on-a-chip; Vacuum systems; Vacuum technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.801247
Filename :
1019936
Link To Document :
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