DocumentCode
789404
Title
Radiation Effects upon Gallium Arsenide Devices
Author
Schnurr, R.H. ; Southward, H.D.
Author_Institution
University of New Mexico Albuquerque, New Mexico
Volume
15
Issue
6
fYear
1968
Firstpage
306
Lastpage
310
Abstract
The behavior of gallium arsenide Gunn oscillators, transistors, Schottky barrier diodes and optoelectronic pulse amplifier, were investigated in a flash X-ray environment. The damaging effects of fast neutrons from a pulsed reactor were also observed. When possible, the resultant data were compared with available data for similar silicon devices.
Keywords
Gallium arsenide; Gunn devices; Inductors; Neutrons; Oscillators; Pulse amplifiers; Radiation effects; Schottky barriers; Schottky diodes; Silicon devices;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1968.4325061
Filename
4325061
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