InGaN-LD-Pumped ${\\rm \\Pr}^{3+}$ : ${\\rm LiYF}_{4}$ Continuous-Wave Laser at 915 nm

Author

Biao Qu ; Bin Xu ; Yongjie Cheng ; Saiyu Luo ; Huiying Xu ; Yikun Bu ; Camy, Patrice ; Doualan, Jean-Louis ; Moncorge, Richard ; Zhiping Cai

Author_Institution

Dept. of Electron. Eng., Xiamen Univ., Xiamen, China

Volume

6

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

1

Lastpage

11

Abstract

We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr³⁺: LiYF₄ crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are estimated to be about 0.45%, and the M² beam quality factors measured in x and y dimensions are about 1.07 and 1.04, respectively.

Keywords

III-V semiconductors; gallium compounds; indium compounds; lithium compounds; optical losses; optical pumping; semiconductor lasers; solid lasers; wide band gap semiconductors; yttrium compounds; InGaN; InGaN-LD-pumped room temperature; LiYF₄:Pr³⁺; beam quality factors; continuous-wave laser operation; crystal; laser slope efficiency; round-trip optical losses; temperature 293 K to 298 K; wavelength 915 nm; Diode lasers; Laser excitation; Laser transitions; Pump lasers; Semiconductor lasers; Solid lasers; Diode-pumped lasers; Solid state lasers; diode-pumped lasers; infrared lasers;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2014.2374618

Filename

6977881

InGaN-LD-Pumped : Continuous-Wave Laser at 915 nm

Biao Qu ; Bin Xu ; Yongjie Cheng ; Saiyu Luo ; Huiying Xu ; Yikun Bu ; Camy, Patrice ; Doualan, Jean-Louis ; Moncorge, Richard ; Zhiping Cai

jour

InGaN-LD-Pumped ${\\rm \\Pr}^{3+}$ : ${\\rm LiYF}_{4}$ Continuous-Wave Laser at 915 nm