DocumentCode
790794
Title
Threshold currents of 1.2-1.55 μm P-substrate buried crescent laser diodes
Author
Kakimoto, S. ; Takemoto, A. ; Sakakibara, Y. ; Nakajima, Y. ; Fujiwara, M.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
Volume
28
Issue
7
fYear
1992
fDate
7/1/1992 12:00:00 AM
Firstpage
1631
Lastpage
1635
Abstract
P-substrate buried crescent (PCB) laser diodes whose wavelength ranged from 1.2 to 1.55 μm have been fabricated. The threshold currents as low as 10 mA have been obtained in this wavelength range experimentally. The calculated threshold currents of 13, 13, and 14 mA at 1.2, 1.3, and 1.55 μm almost coincide with the measured values
Keywords
laser transitions; semiconductor junction lasers; 1.2 to 1.55 micron; P-substrate buried crescent laser diodes; calculated threshold currents; wavelength range; Current measurement; Diode lasers; Etching; Fiber lasers; Laser modes; Optical coupling; Tellurium; Threshold current; Wavelength measurement; Zinc;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.142547
Filename
142547
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