The dual gate power device exhibiting the IGBT and the thyristor action

Author

Ueno, Katsunori ; Otsuki, Masahito ; Ryoukai, Yohichi ; Sakurai, Kenya ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

Volume

16

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

328

Lastpage

330

Abstract

This new power device is fabricated and demonstrated for the first time. The device can behave as an insulated gate field-effect transistor (IGBT) or a thyristor by adding a second control gate. The characteristics obtained experimentally are that the forward voltage for the thyristor mode is 1.2 V at 100 A/cm/sup 2/, the device transits between two operation modes within only 200 ns, and the switching speed for the IGBT mode is the same as the usual IGBT. All these results indicate that the trade-off relation between the forward voltage and switching speed was greatly improved by the additional gate.<>

Keywords

bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; thyristors; 1.2 V; 200 ns; IGBT action; control gate; dual gate power device; forward voltage; operation modes; switching speed; thyristor action; thyristor mode; trade-off relation; FETs; Insulated gate bipolar transistors; Insulation; Low voltage; MOSFET circuits; Plasma devices; Plasma properties; Protection; Semiconductor optical amplifiers; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.388723

Filename

388723