DocumentCode
791005
Title
The guard-ring termination for the high-voltage SiC Schottky barrier diodes
Author
Ueno, Katsunori ; Urushidani, Tatsuo ; Hashimoto, Kouichi ; Seki, Yasukazu
Author_Institution
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
Volume
16
Issue
7
fYear
1995
fDate
7/1/1995 12:00:00 AM
Firstpage
331
Lastpage
332
Abstract
In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.<>
Keywords
Schottky diodes; oxidation; power semiconductor diodes; semiconductor materials; silicon compounds; titanium alloys; AlTi-SiC; Schottky barrier diodes; breakdown voltage; edge termination; guard-ring termination; high-voltage diodes; local oxidation process; p-n junction mesa; yield; Annealing; Chemical vapor deposition; Electric resistance; Fabrication; Oxidation; P-n junctions; Schottky barriers; Schottky diodes; Silicon carbide; Switching loss;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.388724
Filename
388724
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