Polarization Insensitive Asymmetric Ridge Waveguide Design for Semiconductor Optical Amplifiers and Super Luminescent Light-Emitting Diodes

Author

Labukhin, Dmitry ; Li, Xun

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.

Volume

42

Issue

11

fYear

2006

Firstpage

1137

Lastpage

1143

Abstract

A polarization-insensitive waveguide design featuring a novel asymmetric ridge structure is proposed. This design relaxes former stringent constraints imposed on material compositions (i.e., refractive indices) and geometrical dimensions in an attempt to reach low polarization sensitivity over a broad wavelength operating range. In conjunction with a bulk active region with an isotropic gain, such a design is highly desirable for its potential to eliminate the polarization dependence of the optical gain in semiconductor optical amplifiers or output power in super luminescent light-emitting diodes

Keywords

light polarisation; refractive index; semiconductor optical amplifiers; superluminescent diodes; waveguide lasers; asymmetric ridge structure; bulk active region; geometrical dimensions; isotropic gain; material compositions; optical gain; polarization dependence; polarization insensitive waveguide; polarization sensitivity; refractive indices; semiconductor optical amplifiers; superluminescent light-emitting diodes; waveguide design; Composite materials; Light emitting diodes; Optical design; Optical materials; Optical polarization; Optical refraction; Optical waveguides; Semiconductor materials; Semiconductor optical amplifiers; Semiconductor waveguides; Asymmetric structure; polarization dependence; ridge waveguides (RWGs); semiconductor optical amplifiers; superluminescent light emitting diodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.882875

Filename

1710149