DocumentCode
791664
Title
Fundamental Experiments for the Bloch Line Memory
Author
Hidaka, Y.
Author_Institution
Microelectronics Research Labs, NEC Corporation.
Volume
3
Issue
10
fYear
1988
Firstpage
698
Lastpage
705
Abstract
Fundamental functions such as domain stabilization, vertical Bloch line (VBL) pair propagation, and VBL pair injection for the Bloch line memory were experimentally investigated. A ring-shaped domain has been developed which gives a propagation track for VBL pairs. Selective grooving of the magnetic film surface provides for formation and stabilization of the ring-domain. A VBL pair has been propagated by a local in-plane field. VBL pair separation and recombination by an in-plane field was also successfully carried out. A method for VBL pair injection into the domain wall has been developed. This method utilizes the horizontal Bloch line (HBL) punch-through at the flank wall and successive domain chopping. The method is more practical than pushing the stripe domain head.
Keywords
Conductors; Epitaxial growth; Magnetic confinement; Magnetic domain walls; Magnetic films; Magnetic heads; Magnetic materials; Shape; Substrates; Writing;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1988.4563840
Filename
4563840
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