Title :
Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs
Author :
Koudymov, A. ; Xuhong Hu ; Simin, K. ; Simin, G. ; Ali, Mohamed ; Yang, J. ; Asif Khan, M.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1A/mm 100 μm wide device exceeds 40 W for a 1-mm wide 2-A/mm MOSHFET.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave switches; power MOSFET; power semiconductor switches; wide band gap semiconductors; 0.27 dB; 40 W; AlGaN-GaN; RF switch; active elements; heterostructure field-effect transistor; high breakdown voltage; high saturation current; impedance matching; insertion loss; low gate capacitance; low gate leakage current; low-loss high power; metal-oxide-semiconductor HFET; multifinger MOSHFET; submicron gate devices; Aluminum gallium nitride; Capacitance; Circuit testing; Gallium nitride; Impedance matching; Insertion loss; Leakage current; MOSHFETs; Radio frequency; Switches;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.801301
